منابع مشابه
A New Vapor Pressure Equation
The Wagner equation for prediction of vapor pressure has been modified in order to improve it accuracy. On the basis of this modifications, development of a new equation for prediction of vapor pressure is outlined. Examples of the use of the equation for obtaining vapor pressure for a total of 94 pure substance are given. The proposed equation combines simplicity and accuracy and performs as w...
متن کاملSurface roughening in low-pressure chemical vapor deposition
We examine, using (211)-dimensional Monte Carlo simulations, the roughening behavior of a reemission model for chemical vapor deposition. We find that, for pure first-order reemission, the interface roughens logarithmically with time and that the scaling exponents are, for most sets of conditions, close to the exponents of the Edwards-Wilkinson model (a50, b50, and z52). We compare our results ...
متن کاملMorphology transition during low-pressure chemical vapor deposition.
Assuming a reemission model, we have studied, in detail, the effect of sticking coefficient on the morphology evolution in low-pressure chemical vapor deposition processes. We have shown that the surface morphology changes from a self-affine fractal to a columnarlike morphology with increasing sticking coefficient, which agrees qualitatively with experimental observations.
متن کاملBilayer Graphene Growth by Low Pressure Chemical Vapor Deposition
Successfully integrating graphene in standard processes for applications in electronics relies on the synthesis of high-quality films. In this work we study Low Pressure Chemical Vapor Deposition (LPCVD) growth of bilayer graphene on the outside surface of copper enclosures. The effect of several parameters on bilayer growth rate and domain size was investigated and high-coverage bilayers films...
متن کاملComposition Control of Low-Volatility Solids Through Chemical Vapor Transport Reactions. I. Theory of Selective Chemical Vapor Transport
A new method is proposed for controlling the composition (nonstoichiometry) of low-volatility inorganic compounds. It is based on the introduction/elimination of one of the components into/ from the low-volatility compound using reversible selective chemical vapor transport. The conditions for composition control through selective chemical vapor transport are deduced from the principles of none...
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ژورنال
عنوان ژورنال: Journal of the American Chemical Society
سال: 1906
ISSN: 0002-7863,1520-5126
DOI: 10.1021/ja01972a007